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High-fluence femtosecond laser pulses can induce physical and chemical changes in materials that are unrealizable under standard laboratory conditions. The exact nature of these changes can depend strongly on the gaseous environment in which the material is irradiated since near-surface chemical reactions can occur between the two materials. Surface modifications of silicon are of particular interest due to its significance in semiconductor-based applications. Specifically, the formation of silicon nitride (Si3N4) structures is desirable for multiple applications due to its high stability and low dielectric constant. Herein, we report on femtosecond laser-induced morphological and chemical modifications of silicon in a nitrogen atmosphere. We observed an extremely fast chemical reaction in the silicon-nitrogen system. The presence of crystalline Si3N4 was confirmed using high-resolution transmission electron microscopy, representing the first reported synthesis of Si3N4 nanocrystals through femtosecond laser-based methods. In addition, the surface was found to contain alternating layers of amorphous and crystalline silicon. Provided are plausible mechanisms for the formation of each of these structures. Taken together, these findings on surface modification of silicon using femtosecond laser irradiation may provide new pathways for manufacturing of nanoscale devices. 

Abstract Au nanoclusters often demonstrate useful optical properties such as visible/near‐infrared photoluminescence, in addition to remarkable thermodynamic stability owing to their superatomic behavior. The smallest of the 8e⁻superatomic Au nanoclusters, Au₁₁, has limited applications due to its lack of luminescence and relatively low stability. In this work, we investigate the introduction of a single Pt dopant to the center of a halide‐ and triphenylphosphine‐ligated Au₁₁nanocluster, affording a cluster with a proposed molecular formula PtAu₁₀(PPh₃)₇Br₃. Electrochemical and spectroscopic analysis reveal an expansion of the HOMO–LUMO gap due to the Pt dopant, as well as relatively strong near‐infrared (NIR) photoluminescence which is atypical for an M₁₁cluster (λ_max= 700 nm, Φ = 1.88 %). The Pt dopant additionally boosted photostability; more than tenfold. Lastly, we demonstrate the application of the PtAu₁₀cluster's NIR photoluminescence in the detection of the nitroaromatic compound 2,4‐dinitrotoluene, with a limit‐of‐detection of 9.52 μM (1.74 ppm). The notable ability of a single central Pt dopant to unlock photoluminescence in a non‐luminescent nanocluster highlights the advantages of heterometal doping in the tuning of both the optical and thermodynamic properties of Au nanoclusters. 

Spatial confinement of electronic topological surface states (TSSs) in topological insulators poses a formidable challenge because TSSs are protected by time-reversal symmetry. In previous works formation of a gap in the electronic spectrum of TSSs has been successfully demonstrated in topological insulator/magnetic material heterostructures, where ferromagnetic exchange interactions locally lift the time-reversal symmetry. Here we report experimental evidence of exchange interaction between a topological insulator Bi2Se3 and a magnetic insulator EuSe. Spin-polarized neutron reflectometry reveals a reduction of the in-plane magnetic susceptibility within a 2 nm interfacial layer of EuSe, and the combination of superconducting quantum interference device (SQUID) magnetometry and Hall measurements points to the formation of an interfacial layer with a suppressed net magnetic moment. This suppressed magnetization survives up to temperatures five times higher than the Néel temperature of EuSe. Its origin is attributed to the formation of an interfacial antiferromagnetic state. Abrupt resistance changes observed in high magnetic fields are consistent with antiferromagnetic domain reconstruction affecting transport in a TSS via exchange coupling. The high-temperature local control of TSSs with zero net magnetization unlocks new opportunities for the design of electronic, spintronic, and quantum computation devices, ranging from quantization of Hall conductance in zero fields to spatial localization of non-Abelian excitations in superconducting topological qubits. 

A binary mixture of mesoporous silica nanoparticles plus organic polyammonium additive (dye or drug) is cleanly converted upon mild heating into hollow nanoparticles. The remodeled nanoparticle shell is an organized nanoscale assembly of globular additive/silica subunits and cancer cell assays show that a loaded drug additive is bioavailable. 

Abstract The interface of common III‐V semiconductors InAs and GaSb can be utilized to realize a two‐dimensional (2D) topological insulator state. The 2D electronic gas at this interface can yield Hall quantization from coexisting electrons and holes. This anomaly is a determining factor in the fundamental origin of the topological state in InAs/GaSb. Here, the coexistence of electrons and holes in InAs/GaSb is tied to the chemical sharpness of the interface. Magnetotransport, in samples of Mn‐doped InAs/GaSb cleaved from wafers grown at a spatially inhomogeneous substrate temperature, is studied. It is reported that the observation of quantum oscillations and a quantized Hall effect whose behavior, exhibiting coexisting electrons and holes, is tuned by this spatial nonuniformity. Through transmission electron microscopy measurements, it is additionally found that samples that host this co‐existence exhibit a chemical intermixing between group III and group V atoms that extends over a larger thickness about the interface. The issue of intermixing at the interface is systematically overlooked in electronic transport studies of topological InAs/GaSb. These findings address this gap in knowledge and shed important light on the origin of the anomalous behavior of quantum oscillations seen in this 2D topological insulator. 

$${\rm Au}_{25}\lpar {{\rm C}_6{\rm H}_{14}{\rm S}} \rpar_{18}{}^-$$ icosahedron and [Au 25 (PPh) 10 (C 6 H 14 S) 5 Cl 2 ] 2+ bi-icosahedron clusters were synthesized. Ligand exchange reactions were carried out with a new coumarin-derived fluorophore (Cou-SH) to label both clusters. Labeled and unlabeled Au 25 were compared and the changes in the electronic structure were determined. The labeled clusters showed marked changes in electronic states, as evidenced by the quenching in the UV region and enhancement in the near infrared. The quantum yield from Cou-SH decreased and the quantum yield from the labeled Au 25 increased. Second, the authors observed changes in the electrochemical band gap.